Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Controls/MCUs

WJ HBT amplifier eyes medium power market

Posted: 02 Oct 2003 ?? ?Print Version ?Bookmark and Share

Keywords:wj communications? indium gallium phosphide? ingap? hetero-junction bipolar transistor? hbt?

WJ Communications Inc. has introduced a family of indium gallium phosphide (InGaP) hetero-junction bipolar transistor (HBT) medium power driver amplifiers that are suitable for wireless infrastructure applications.

The AH110, AH115, AH116, AH215, and AH312 amplifiers span the 1/4W to 2W output power range and provide high linearity and power efficiency over a broad operating range. The products deliver high output powers while meeting the system-critical ACPR performance requirements.

Capable of running class A/B for better efficiency while covering frequencies from 400MHz to 2,300MHz, the five InGaP HBT amps operate directly off a single positive voltage bias and are packaged in low-cost, thermally efficient SMT SOT-89 and SOIC-8 packages.

Article Comments - WJ HBT amplifier eyes medium power m...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top