Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Micron RLDRAM II operates at 400MHz

Posted: 10 Oct 2003 ?? ?Print Version ?Bookmark and Share

Keywords:micron technology? reduced latency dram ii? rldram ii?

Micron Technology Inc. has announced sample availability of its 288Mb reduced latency DRAM II (RLDRAM II) products that operate at 400MHz DDR operation. The RLDRAM II products combine fast random access with high bandwidth and high density to target communication and data storage systems.

The DDR SDRAMs's eight-bank architecture is designed to achieve a peak bandwidth of 28.8Gbps using a 36-bit interface and a 400MHz system clock. The products also feature low latency and random cycle time (tRC) of 20ns to provide high bus utilization efficiencies, on-die termination (ODT), multiplexed or non-multiplexed addressing, on-chip delay lock loop (DLL), common and separate I/O, programmable output impedance, and 1.8V core.

Available in 144-ball FBGA, the device measures 11-by-18.5mm.

Article Comments - Micron RLDRAM II operates at 400MHz
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top