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Spire method obtains U.S. patent

Posted: 30 Oct 2003 ?? ?Print Version ?Bookmark and Share

Keywords:spire? semiconductor wafer? ic laser? optical waveguide?

Spire Corp. announced that they have received from the U.S. Patent and Trademark Office a patent on a method for implanting aluminum oxide in gallium arsenide and other III-V semiconductor wafers for isolation of IC lasers and optical waveguides.

U.S. Patent No. 6,635,559, entitled "of Insulating Aluminum Oxide in Semiconductor Substrates," describes a process whereby aluminum oxide can be selectively formed in the top layers of III-V compound semiconductor wafer structures to ensure electrical isolation between devices in ICs.

The patent includes use of the method for device isolation in the lateral plane of III-V semiconductor integrated circuits as well as for incorporation of buried layers of aluminum oxide insulator material into integrated electronic and optoelectronic device structures. Possible applications for this technology include wireless audio communication devices, Wi-fi devices, broadband and wireless internet and video devices, as well as future optoelectronic and photonic components and systems.

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