Chartered Semiconductor adopts MoSys SRAM technology

Chartered Semiconductor Mfg and MoSys Inc. have entered into an agreement to qualify and offer MoSys' quad density 1T-SRAM-Q technology on Chartered's 0.13&181;m process. This agreement extends the existing collaboration between the companies to offer additional optimized high-density memory solutions on multiple technology generations and products.

MoSys and Chartered have already successfully qualified MoSys' 1T-SRAM high-density memory solution on Chartered's 0.18&181;m and 0.13&181;m process technologies, and are in the process of qualifying the 1T-SRAM technology on Chartered's NanoAccess 90nm SoC manufacturing technologies.

"The memory requirements of customers are increasing over time and with each technology node. By offering MoSys' embedded memory technologies as a complement to Chartered's 0.13&181;m platform, customers have greater flexibility and a predictable path for implementing their SoCs," said Kevin Meyer, VP of worldwide marketing and services at Chartered.