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NEC, Tokuyama develop resist for 8nm line widths

Posted: 25 Nov 2003 ?? ?Print Version ?Bookmark and Share

Keywords:nec? tokuyama? electron beam resist? chloromethyl calix 4 arene?

NEC Corp. and Tokuyama Corp. have jointly developed an electron beam resist that enables 8nm line etching with line edge roughness of <1nm.

The new resist is chloromethyl calix 4 arene, which consists of four benzene rings connected in a 0.7nm(?) ring.

The small molecular mass of the resist enables the 8nm resolution. The material does not easily crystalize, which contributes to suppressing the line edge roughness to <1nm, according to the companies.

NEC's researchers used the resist and successfully formed polysilicon structures 10nm wide by 60nm high, separated by 35nm intervals. This indicates that such small nanometer level devices can be formed and tested for evaluation, said a spokesman of NEC.

Tokuyama has started to offer the resist, targeting laboratories and research organizations.

- Yoshiko Hara

EE Times

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