MoSys ports SRAM technology to NEC 90nm process

MoSys Inc., a provider of SoC embedded memory solutions, announced the initial silicon verification of its 1T-SRAM-R memory technology on NEC Electronics' 90nm standard logic process. Silicon test chips for MoSys' quad density 1T-SRAM-Q embedded memory technology are also currently being manufactured on NEC Electronics' 90nm logic process.

"MoSys has already very successfully partnered with NEC Electronics to deliver SoC embedded memory solutions in high volume," commented Mark-Eric Jones, VP and general manager of IP at MoSys "We look forward to continuing and broadening this relationship to enable NEC Electronics' 90nm logic process customers to take advantage of our latest 1T-SRAM-Q and 1T-SRAM-R technologies for their SoC designs."