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Powerchip, SST to co-develop 3G SuperFlash technology

Posted: 03 Dec 2003 ?? ?Print Version ?Bookmark and Share

Keywords:powerchip? silicon storage technology? sst? dram? superflash?

Powerchip Semiconductor Corp. (PSC), a DRAM manufacturer in Taiwan, and Silicon Storage Technology Inc. (SST) have teamed up to develop its third-generation SuperFlash memory technology.

The new SuperFlash cell currently under development at PSC is based on an 0.11?m process technology. Once established, the parties plan to scale it down to 90nm and 65nm nodes. SST's SuperFlash is capable of delivering high density memory products based on its NOR architecture, making it suitable for data storage applications that traditionally have been addressed by flash memories with NAND architectures.

The first product under development is a 2Gb flash media with pin-outs and electrical specifications compatible with industry-standard NAND products. SST and PSC have recently verified the new-generation SuperFlash memory cell structure and electrical data. The parties plan to complete the technology development during 2004 in order for volume production of a 2Gb product in 2005. Under terms of the agreement, both companies agree to utilize PSC's 300mm manufacturing facilities to produce SST-brand products and PSC-brand licensed data storage products. SST will collect royalty from PSC based on the sales of the PSC-brand SuperFlash products.





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