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Fujitsu amplifier with 174W output

Posted: 12 Dec 2003 ?? ?Print Version ?Bookmark and Share

Keywords:fujitsu laboratories? gallium nitride? gan? high electron mobility transistor amplifier? hemt amplifier?

Fulfilling W-CDMA system requirements for base stations, the gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier from Fujitsu Laboratories Ltd offers a power output of 174W at 63V, while featuring a drain efficiency of 40 percent.

The epitaxial layer minimizes the phenomena of output and efficiency falling at high voltages. This enables actualization of the 174W output at 63V.

Up until now, the company used its GaN HEMT technology in conjunction with distortion compensation circuits, demonstrating that the technology would be applicable to 3G mobile base-station amplifiers that operate at high efficiency. Its new technology uses GaN HEMT to produce stable power output at high voltage. Fujitsu has discovered that technical problems such as potential device failure and unstable output, which were observed when voltage exceeded 50V, are attributable to non-uniformity and defects in the gallium nitride epitaxial layer. By improving the uniformity of the HEMT epitaxial growth and through growth condition optimization, the company has succeeded in enabling high-voltage operation.

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