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Vishay MOSFETs offer FOM of 83

Posted: 16 Dec 2003 ?? ?Print Version ?Bookmark and Share

Keywords:vishay? mosfet? trenchfet gen ii technology? siliconix? si4336dy?

Two devices that bring the low on-resistance of high-density TrenchFET Gen II technology to Qg/PWM-optimized MOSFETs were released by Siliconix Inc.

Compared with the SO-8 devices, the Si4336DY (Little Foot SO-8) and Si7336DP (PowerPAK SO-8) offer a 13.5 percent better on-resistance-times-gate charge product of 83 milliohmsnC. The ratio of gate-to-drain and gate-to-source charges has been improved by 35.6 percent.

Used as the low-side MOSFET in computer synchronous buck converters, or for fixed-telecom synchronous rectification or POL converters, the products provide reduced switching and conduction losses, or higher current operation with the same efficiency, at frequencies up to 1MHz.

Featuring a typical rDS(on) of 2.6 milliohms and typical gate charge of 32nC, the devices' high threshold voltage combines with its low QGD/QGS ratio to offer shoot-thru protection and add efficiency by providing good margin for noise and voltage spikes.

The Si4336DY and Si7336DP are 100 percent Rg-tested, minimizing the effect of device variation and ensuring that devices will perform to minimum and maximum specifications in high-frequency applications.

Lead time is between 10 to 12 weeks for large orders.

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