Spire obtains grant to develop low-noise APDs

Spire Corp. has received a six-month, $100,000 Small Business Innovative Research Phase I grant from the National Science Foundation to investigate low noise avalanche photodiodes (APDs) in the 1?m to 1.6?m wavelength range. Achieving the program goal of lower noise APDs at 1.55?m is expected to enable higher speed optical fiber communication systems with lower bit error rates.

Spire's APDs will be made from a particular composition of the compound semiconductor AlGaSb which enhances hole ionization that results in a lower noise device. The AlGaAs material will be produced by Bandwidth Semiconductor, Spire's wholly owned subsidiary, using MOCVD (metal organic chemical vapor deposition), a thin-film semiconductor growth process that can also be used to synthesize intelligent multi-dimensional nanostructures.

Roger Little, chairman and CEO of Spire said, "With the telecomm industry experiencing some recovery, we are delighted to receive this award. Low noise APDs are products that fit well with Bandwidth Semiconductor's capabilities and commercial directions."