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RF/Microwave??

Sirenza amplifier has internal regulated bias circuit

Posted: 29 Jan 2004 ?? ?Print Version ?Bookmark and Share

Keywords:sirenza microdevices? sgb line? sige hetero-junction bipolar transistor darlington amplifier? sige hbt darlington amplifier? sgb-6533?

Sirenza Microdevices has expanded its silicon germanium (SiGe) product portfolio with the release of the SGB family.

The low cost, high performance amplifier family includes six SiGe hetero-junction bipolar transistor (HBT) Darlington amplifiers, operating at three different current specifications with two gain performance levels for each current.

The SGB-6533 provides 18.3dB gain, 32dBm of OIP3 and 18.4dBm of P1dB at 2GHz with a bias level of 88mA at 5V. Other models are designed for lower power consumption applications and operate at a supply voltage of 3V.

Each device incorporates an internally regulated bias circuit that eliminates the need for a bias-dropping resistor. John Pelose, VP and GM of amplifier division, said, "The new SGB products include all the key features demanded by infrastructure and other telecommunications customers, including exceptional performance, ruggedness, and low cost. The combination of high performance, 5V and 3V supply voltages and advanced IC packaging are ideal for cost and size sensitive RF requirements of the future."

Offered in a low cost, surface-mount 3-by-3mm QFN package, the devices provide robust ESD performance, 1,000V HBM, Class 1C and include a moisture sensitivity rating of MSL 1.





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