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Cypress-Silects co-develop low-k materials for chip devices

Posted: 12 Feb 2004 ?? ?Print Version ?Bookmark and Share

Keywords:cypress semiconductor? silecs? low-k dielectric material? ic device?

Cypress Semiconductor Corp. and Silecs Inc. have agreed to collaborate on the development and testing of Silecs' novel, non-porous, low-k dielectric materials in certain devices manufactured by Cypress.

The key objectives are to improve speed performance, lower power consumption, reduce manufacturing costs and improve overall device yield. This project is part of Cypress' efforts to develop low-k process for use in device manufacturing.

Low-k dielectrics are used in the manufacturing of advanced IC devices and are important in achieving high-speed and reduced power consumption. Low-k materials, particularly porous low-k films, have proven difficult to integrate into the IC manufacturing processes. This is mainly due to their insufficient thermo-mechanical robustness, absorption of wet chemicals during processing and mismatches in thermal expansion characteristics with interconnect metals. Through molecular engineering, Silecs has developed non-porous, low-k materials to specifically overcome these issues.





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