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Sandisk, Toshiba tout 4GB NAND flash memory

Posted: 14 Apr 2004 ?? ?Print Version ?Bookmark and Share

Keywords:sandisk? toshiba? nand flash? memory?

SanDisk Corp. and Toshiba Corp. have doubled the capacity of their jointly developed NAND flash memory to 4Gb by applying multilevel cell technology on a 90nm process. The memory chip tops Samsung's 2Gb NAND memory also made using a 90nm process.

Simultaneously, the partners have developed an 8Gb device by stacking two single-die 4Gb chips in one package. Samples of the single die and stacked chip will be available within a month at $113 and $226 each respectively.

The two companies plan to begin volume production of the 4- and 8Gb memories in the third quarter at Flash Vision Japan, their joint venture company based at Toshiba's Yokkaichi plant. The facility has a monthly capacity of 300,000 units for each.

SanDisk and Toshiba applied the multilevel cell technology and scaled it down to 90nm. This doubled capacity of a single-die memory they introduced last June using 130nm technology.

The new 4Gb NAND flash memory achieves eight times faster write performance, said Toshiba, by enlarging page size by four times to 2048+64 bytes from the present 512+12 bytes. Programming speed nearly doubled from 1,000ms to 600ms.

As an extension of this product line, the companies plan to introduce a 16Gb NAND flash memory chip that stacks four of the 4Gb single dies in the same sized TSOP package. Samples will be available in the third quarter of 2004, but the timing of volume production has not yet disclosed.

Toshiba will use the new memories for its card products and will also offer the chips commercially. SanDisk, on the other side, plans to use the output for its own card products for now.

Demand for flash memory is expanding rapidly. To meet it, the two companies decided to move up construction of a new 300mm fab by one year to begin operations in the second half of 2005. Construction has commenced on April 13.

- Yoshiko Hara

EE Times

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