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TEL photomask system eyes 90-, 65nm device nodes

Posted: 15 Apr 2004 ?? ?Print Version ?Bookmark and Share

Keywords:tokyo electron? tel? photomask resist coater/developer? clean track act m?

Tokyo Electron (TEL) has begun accepting orders for its Clean Track ACT M (mask) photomask resist coater/developer that is targeted for 90nm to 65nm technology nodes.

Based on the company's Clean Track ACT platform, the device is based on three separate high performance application modules, including a photomask developer, photomask resist coater, and photomask PEB (Post Exposure Bake) baker.

According to TEL, increased complexities such as OPC (Optical Proximity Correction), phase shifting and use of chemically amplified resists require more advanced processing control and techniques to manufacture photomasks for the finer technology nodes.

The Clean Track ACT M is designed for photomask (6025 Substrate) processing for the 90nm to 65nm device nodes. The individual photomask developer, resist coater and baker modules can be configured into one system.

The company plans to deliver 20 systems in the first year of the product's release.

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