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Siliconix MOSFET eyes high-side switches, electric motor drives

Posted: 05 May 2004 ?? ?Print Version ?Bookmark and Share

Keywords:mosfet? siliconix? vishay intertechnology?

Automotive 12V boardnet high-side switches and electric motor drives are the target applications of the new family of p-channel MOSFETs released by Siliconix Inc., a subsidiary of Vishay Intertechnology Inc.

According to the company, the -40V and -60V devices are the first with these breakdown voltage ratings to be built using Vishay's advanced p-channel technology that reduces MOSFET on-resistance. Maximum rds(on) ratings range from 15 milliohms to 4.2 milliohms for the six new products.

Siliconix explained that since p-channel MOSFETs require no additional high-side driver circuitry for turn-on, the TrenchFETs will help designers to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions.

When used to replace previous-generation p-channel devices, the devices will give designers the opportunity to lower system power consumption as well. The company also said that when compared with the p-channel MOSFETs available on the market with the same voltage ratings and package outlines, conduction losses for the new devices are reduced by up to 90 percent.

Package options for the -40V devices are the standard DPAK (SUD50P04-09L), the thermally enhanced D?PAK (SUM110P04-04L), and the lead-less 1.07mm-high PowerPAK SO-8 (Si7463DP). The DPAK and D?PAK devices are rated for a maximum junction temperature of 175C, while the PowerPAK SO-8 TrenchFETs are rated for up to 150C.

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