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Peregrine DSAs impress with IP3 spec

Posted: 07 May 2004 ?? ?Print Version ?Bookmark and Share

Keywords:peregrine semiconductor? rf cmos? digital step attenuator? dsa? pe4302?

Peregrine Semiconductor Corp., a supplier of high-performance RF CMOS and mixed-signal communications ICs, has introduced a new family of Digital Step Attenuators (DSAs) that demonstrate new levels of broadband linearity, attenuation accuracy, and programming flexibility, providing exquisite design solutions for today's proliferating RF applications.

The new family of devices, including the 6-bit PE4302 and PE4304 components, is Peregrine's first commercial DSA product line and has raised the bar on DSA performance within the RF industry. Manufactured on the company's proprietary UTSi RF CMOS Silicon-on-Sapphire technology, the products draw from many years of high-performance RF CMOS and mixed-signal IC experience.

The PE4302 and PE4304 devices are 50 ohm and 75 ohm, 6-bit DSAs with a 0.5dB LSB, positive logic serial and parallel interface, single 3V supply, and a unique power-up preset feature. The devices are ideal for many RF applications such as cellular base station, fixed frequency transceivers, repeaters, power amplifier distortion canceling loops and throughout CATV distribution systems.

"The extraordinary performance of the new Peregrine DSAs, including high accuracy and IP3 down to 100kHz, has positioned the PE4302 and PE4304 as the industry choice for new designs," commented Ron Reedy, Peregrine's VP of Sales and Marketing.

Input IP3 vs. frequency

Specific capabilities brought to bear on the new DSA products from Peregrine include high ESD tolerance, high linearity to near DC, serial and parallel interface logic, and industry leading insertion loss of 1.5dB. Guaranteed Return Loss (RL) for the PE4302 is 15dB through 2.2GHz, making it 5dB to 6dB better than its competitors and uniquely compatible with termination sensitive components. The PE430X DSA devices also include a preset power-up attenuation state, a function afforded due to the monolithic CMOS fabrication process.

UTSi CMOS is a proprietary, patented variation of silicon-on-insulator (SOI) technology. It is the first commercially qualified use of sapphire substrates with high yields and competitive costs.

UTSi CMOS combines high-performance RF, mixed-signal, passive elements, nonvolatile memory and digital functions on a single device. Significant performance advantages exist over competing mixed-signal processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount. Additionally, because UTSi SOS is fabricated in standard high-volume CMOS facilities, Peregrine products benefit from the fundamental cost effectiveness and high yields, scalability and integration of CMOS, while achieving the performance of SiGe and GaAs. And since sapphire is a near perfect insulator, UTSi SOS products can integrate high-quality passive devices directly into the IC, offering unprecedented levels of RF integration and cost effectiveness.

The PE4302 and PE4304 are available in 20-lead QFN packages and are the first two devices of a complete line of 5-bit and 6-bit DSA products from Peregrine Semiconductor scheduled for release this year.

- Paul O'Shea


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