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Siliconix MOSFET integrates WFET, TrenchFET designs

Posted: 12 May 2004 ?? ?Print Version ?Bookmark and Share

Keywords:siliconix? vishay intertechnology? mosfet? si4368dy? si7668dp?

Siliconix Inc., a subsidiary of Vishay Intertechnology Inc., has disclosed that its recently released MOSFETs are the first two power MOSFETs to combine the low Qgd values enabled by WFET technology with the low rDS(on) values of TrenchFET Gen II technology.

The Si4368DY (PowerPAK SO-8) and Si7668DP (SO-8) feature on-resistance of 3.6 milliohms at 4.5V, and a rDS(on)-times-Qgd value of 23mnC for improvements of 25 percent and 54 percent, respectively, over specifications for competing MOSFET devices.

To ensure high "shoot-thru" immunity and to help keep Qg in check for reduced switching losses and more efficient dc-to-dc converter performance, both devices provide a Qgd/Qgs ratio of 0.37, which, according to the company, is 54 percent better than competing devices. The maximum gate threshold voltage for the Si4368DY and Si7668DP is 1.8V.

The WFET technology uses a thicker gate oxide at the bottom of the devices' silicon trench to reduce Crss and Qgd with minimal impact on rDS(on) performance. With the release of the new devices, designers can now build an all-WFET dc-to-dc converter using the Si4368DY or Si7668DP on the low side and the previously announced Si4390DY or Si7390DP on the high side.

By applying WFET technology to its latest high-density silicon in the MOSFETs, Vishay achieves a transistor density of 300 million cells per square inch and a low specific on-resistance of 12 milliohm/mm? without compromising switching performance. According to Siliconix, this allows the devices to enable design of faster, lighter, smaller, cooler, more efficient, and longer-running products with more robust feature sets.

The power MOSFETs are designed for low-side operation in synchronous buck (single- and multiphase configurations) dc-to-dc converters in notebook PCs, servers and VRM modules, as well as in synchronous rectification in fixed telecom systems.

Packaged in the thermally enhanced PowerPAK SO-8 package, the Si7668DP also offers lower thermal resistance and greater power dissipation. Samples and production quantities of the WFET TrenchFET Gen II power MOSFETs are available, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $1.25.

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