Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > Memory/Storage
?
?
Memory/Storage??

Spansion claims to speed 110nm flash transition

Posted: 21 May 2004 ?? ?Print Version ?Bookmark and Share

Keywords:spansion? advanced micro devices? fujitsu? flash memories?

Spansion, the joint venture between Advanced Micro Devices Inc. and Fujitsu Ltd said that it has accelerated its transition to 110nm manufacturing process technology in response to customer demand for low-priced components.

The transition had been previously characterized as a near-complete move to 110nm manufacturing at Fab 25 (Austin, Texas) by mid-year, with 110nm technology being introduced at the JV3 fab in Aizu-Wakamatsu in the second half of 2004.

No updated timetable was given for the transition to 110nm process, but the partners said 110nm floating-gate process technology accounts for more than 50 percent of Spansion's Fab 25 production. That indicates that Spansion has just over a month to convert the remaining production to 110nm or miss the previous transition timetable.

Spansion said it had started volume production of S29WS-J and S29NS-J flash memories using a 110nm manufacturing process. The devices come in 64- and 128Mb capacities.

"To match our customers' urgency, we qualified the 110nm floating-gate technology and ramped three distinct product families - our complete wireless-optimized portfolio - in less than six months," said Amir Mashkoori, group vice president and general manager of Spansion's wireless business unit.

- Peter Clarke

Silicon Strategies





Article Comments - Spansion claims to speed 110nm flash...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top