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Siliconix MOSFET has 48 milliohms on-resistance

Posted: 03 Jun 2004 ?? ?Print Version ?Bookmark and Share

Keywords:power mosfet? siliconix? micro foot? si8413db? si8411db?

A new chipscale p-channel power MOSFET that offers one of the industry's lowest on-resistance of any such device with a footprint area under 3mm? was released by Siliconix Inc.

Aimed at battery switch, power amplifier, load switch and charger applications, the new Micro Foot Si8413DB delivers an on-resistance of 48 milliohms at a 4.5V gate drive. Maximum on-resistance at a 2.5V gate drive is 63 milliohms, and breakdown voltage for the device is -20V.

Measuring 1.54-by-1.54-by-0.62mm, the MOSFET is claimed by Siliconix to have comparable performance to devices in the TSOP-6 package while occupying a quarter of the space. The company further added that when used in PDAs, cellphones, pagers and other portable electronics, the new Micro Foot device gives designers the opportunity to make their end product smaller and thinner, to add more features, and/or to extend run times between battery charges.

As the latest product in the Micro Foot family, the Si8413DB offers a 17 percent and 31 percent improvement in maximum on-resistance compared with the previously released Si8411DB and Si8401DB, respectively.

The devices use a solder bump process along with proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die, reducing the size of the devices required to switch power and analog signals in cellphones and other handheld electronic systems.

Samples and production quantities of the Si8413DB are available, with lead times of 12 weeks for larger orders.





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