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Infineon RF transistors deliver reduced memory effect

Posted: 09 Jul 2004 ?? ?Print Version ?Bookmark and Share

Keywords:infineon technologies? goldmos? ldmos laterally diffused metal-oxide semiconductor? rf transistor? ptfa211001e?

Infineon Technologies AG announced the next generation of its GOLDMOS LDMOS (laterally diffused metal-oxide semiconductor) die technology for high-performance, high-power RF transistors that will enable amplifier developers to design more reliable and cost-effective linear amplifiers.

According to the company, the GOLDMOS High-Power RF transistors will deliver linear efficiency, ultrawide-bandwidth performance and reduced memory effect, as well as provide the industry's best thermal performance.

One of the first products incorporating the new technology is the single-ended, 100W PTFA211001E 2.1GHz device. In 2-carrier WCDMA 3GPP mode, this product has an average output of 22W and 16.5dB gain with 30 percent efficiency. It has a bandwidth of several hundred MHz, third-order intermodulation distortion (IM3) performance of -37dBc and a thermal resistance of 0.38C/W.

The thermal performance of the GOLDMOS transistors is significantly improved over previous-generation transistors, Infineon shared, achieving the lowest junction temperatures compared to other RF power transistors available in the market. The transistors will be integrated into products designed for use in UMTS/WCDMA, GSM, CDMA, EDGE, TDSCDMA, PCS/DCS, MMDS, TV broadcast and DAB amplifiers.

GOLDMOS product samples will be available in the Q3 of 2004, with full production beginning in the Q4. Additional information can be found at Infineon's website.





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