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Siliconix MOSFETs offer 0.030-, 0.025-ohm on-resistance

Posted: 12 Aug 2004 ?? ?Print Version ?Bookmark and Share

Keywords:power mosfet? siliconix? vishay intertechnology? si8901edb? si8904edb?

The two new devices from Siliconix Inc., a subsidiary of Vishay Intertechnology Inc., are touted to be the industry's first p-channel and 30V n-channel common-drain, chipscale power MOSFETs.

Available in the 1.6-by-2.4mm chipscale format with a 0.65mm height profile, the new bidirectional MICRO FOOT power MOSFET are 81 percent smaller than TSSOP 8 devices, yet provide similar on-resistance values and better thermal performance.

The 20V Si8901EDB offers an on-resistance of 0.030 ohms enabled by Vishay Siliconix's TrenchFET MOSFET technology. Providing a significant size reduction for Li-ion and Li-polymer smart battery packs in portable devices that presently use dual p-channel SO-8 or TSSOP-8 MOSFETs, this offering can be used to shrink the battery pack circuit or to increase cell volume for longer battery life.

The 30V Si8904EDB is a compact solution for battery packs used in portable devices with a traditional common-drain n-channel configuration. It offers an on-resistance of 0.0225 ohms, a value similar to that provided by existing TSSOP-8 or SO-8 devices, but in a smaller footprint.

Both power MOSFETs are designed for single-cell LiB and LiP battery packs in cellphones, PDAs, MP3 players and digital cameras.

ESD protection is 6kV for the Si8901EDB and 4kV for the Si8904EDB. Samples and production quantities are already available, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery is 65 cents in 100,000-piece quantities.





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