Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > Amplifiers/Converters
?
?
Amplifiers/Converters??

STMicro's new MOSFETs handle 600V

Posted: 07 Sep 2004 ?? ?Print Version ?Bookmark and Share

Keywords:stmicroelectronics? mosfet? stx9nk60zd? stf9nk60zd? stb9nk60zd?

STMicroelectronics' new n-channel MOSFET is designed for use in HID lamps, high-end ballasts and switch-mode power supplies that use zero-voltage and zero-current transitions.

The STx9NK60ZD MOSFET is touted to be the first device built using a new high-voltage process technology known as SuperFREDMesh. Due to this technology that realizes a new carrier lifetime control process on the company's basic High Voltage SuperMESH series, the device shows, along with exceptional dynamic performance, optimized body diode reverse-recovery time (trr) and very soft recovery. All these features help reduce switching losses, STMicro said.

Products built using the SuperFREDMesh technology are also said to benefit from reduced on-resistance, Zener gate protection, high dv/dt capability and cost competitiveness.

The product handles 600V, a drain current of up to 7A and offers a typical RDS(on) of 0.85 ohm. The STF9NK60ZD handles up to 30W, while the STB9NK60ZD and STP9NK60ZD each handle up to 125W.

Priced at 80 cents each in 100,000-unit orders, the MOSFETs are 100 percent avalanche tested and are available in TO-220, TO-220FP and D2PAK packages. Additional information can be found online.





Article Comments - STMicro's new MOSFETs handle 600V
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top