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Chartered yields 0.13?m 300mm wafer in Fab 7

Posted: 10 Sep 2004 ?? ?Print Version ?Bookmark and Share

Keywords:chartered semiconductor? 0.13µm 300mm? wafer? ibm?

Chartered Semiconductor Mfg has achieved functional 0.13?m 300mm wafers from its Fab 7, demonstrating silicon results which exceeded internal targets within five months of the first equipment installation. Additionally, Chartered has launched 300mm wafers at Fab 7 for its 0.11?m process, as well for the 90nm platform it is jointly developing with IBM.

For 200mm and 300mm manufacturing, Chartered is already engaging with customers on its 0.13?m and 0.11?m solutions, as well as on the landmark 90nm cross-foundry platform that will be available at both Chartered's Singapore-based Fab 7 and IBM's East Fishkill, New York fab.

Simultaneously, as part of the joint development and reciprocal manufacturing agreement between Chartered and IBM, a team of IBM technical experts are in Singapore to transfer the jointly developed 90nm technology from IBM's 300mm facility in East Fishkill, New York. The teams from Chartered and IBM are also working together to qualify the equipment set at Fab 7, and align Fab 7's equipment configuration and process flow with those at IBM's facility to enable the industry's first dual-source 90nm platform.

Following the launch of 90nm engineering wafers, Fab 7 remains on schedule to manufacture 90nm silicon-on-insulator (SOI) products for IBM in mid-2005.





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