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Samsung claims 8Gb flash, 2Gb DRAM success

Posted: 23 Sep 2004 ?? ?Print Version ?Bookmark and Share

Keywords:samsung electronics? 8gbit nand flash? 60nm? 2gbit ddr2 synchronous dram? 80nm?

Samsung Electronics Co. Ltd said Sept. 20 that it has developed an 8Gb NAND flash memory using a 60nm manufacturing process and a 2Gb DDR2 synchronous DRAM utilizing an 80nm process technology.

However, the company did not say when it intended to start selling the 8Gb memory. Samsung did say it would accelerate production of 2Gb NAND flash memory in 2004 and that it expected to begin volume production of the 4Gb NAND flash made on a 70nm process technology by the first quarter of 2005. Samsung said it plans to begin volume production of the 2Gb DDR2 SDRAM made using the 80nm manufacturing process in the second half of 2005.

"NAND flash technology development continues to double density growth on an average of every 12 months," Chang Gyu Hwang, president and chief executive officer of Samsung Electronics' semiconductor business.

Samsung's advanced 60nm process technology achieves the world's smallest memory bit cell size of 0.0082 square micron, the company claimed.

The key to development at such high densities and fine circuitry design is a 3-D cell transistor structure and high-dielectric gate insulating technology that minimizes the interference level between cells, the company said, before adding that it is able to use KrF lithography technology, which helps reduce costs.

Samsung said it is introducing a new multi level cell (MLC) technology in the 60nm process technology, but did not make clear whether the 8Gb flash memory utilizes this technology.

To address the high performance features of the DDR2 specification, Samsung adopted a double poly gate technology, 20-angstrom level ultra thin oxide film process, and a triple-layer metal circuitry.

- Peter Clarke

Silicon Strategies





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