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Infineon, Axon confirm nonvolatile memory license

Posted: 27 Sep 2004 ?? ?Print Version ?Bookmark and Share

Keywords:axon technologies? infineon technologies? nonvolatile memory?

Axon Technologies Corp. Tuesday (Sept. 21) announced that Infineon Technologies AG has licensed its next-generation, nonvolatile memory technology.

Infineon follows Micron Technology Inc. as the second major memory manufacturer to obtain a nonexclusive license for Axon's technology, dubbed Programmable Metallization Cell (PMCm).

The deal with Infineon has been expected for months. Hedging its bets in the next-generation, non-volatile memory race, Infineon has been in discussions to form a partnership with Axon.

While Infineon is developing magnetoresistive RAM (MRAM) products as part of a joint venture with IBM Corp., the German company has been looking to license and make devices, based on a rival technology from Axon.

PMCm was developed by Axon of Scottsdale, Arizona, in conjunction with Arizona State University. The technology uses a special silver-based chalcogenide metal compound for the non-volatile memory cell built on top of conventional CMOS chip sensors and circuitry.

Infineon recently tipped plans about using the technology, of which it calls CBRAM or conductive bridging RAM. "The Infineon license comes after an extremely thorough evaluation that extended over two years," said Michael Kozicki, founder of Axon and inventor of the technology, in a statement.

"Because of the DRAM-like sizes of the cells, we believe that the two most likely discrete memory applications for the technology are single chip replacements for the multiple memory chips in cell phones and also low-power memory in large memory arrays," said Kozicki. "While these high-volume applications are extremely exciting, we believe that the compatibility between this technology and CMOS logic processes also makes PMC an ideal nonvolatile embedded process."

- Mark LaPedus

Silicon Strategies





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