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IR offers compact alternative to bipolar devices

Posted: 11 Oct 2004 ?? ?Print Version ?Bookmark and Share

Keywords:international rectifier? ir? radiation-hardened? rad-hard? logicmosfet?

International Rectifier (IR) introduced new radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.

Compared to 2N2222A and 2N2907A bipolar transistors, the company said, its new MOSFETs require less energy, switch faster and feature a lower on-state resistance. Packaged in a UB (3LCC) surface-mount or through-hole package, the new products are compact, lightweight and hermetic alternatives to bipolar devices.

"IR's RAD-Hard logic level MOSFETs offer superior switching performance over their bipolar equivalents and are easier to drive," shared Bryan Rogers, VP of Sales and Marketing for Hi-Rel Products. "The new MOSFETs improve gain and are ideal replacements for bipolar transistors in circuits requiring high tolerance to radiation."

The IRHLUB7970Z4 and IRHLUB770Z4 MOSFETs can be driven directly from industry-standard logic gates, linear ICs or microcontrollers that operate from a low voltage source of 3.3V to 5V. Offered in screened and commercial off-the-shelf (COTS) versions, the new logic-level MOSFETs are already available. Pricing for the IRHLUB7970Z4 and IRHLUB770Z4 begins at $80 each for 500-unit quantities.

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