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Infineon MOSFETs with trench power technology

Posted: 26 Oct 2004 ?? ?Print Version ?Bookmark and Share

Keywords:infineon technologies ag? optimos-t? mosfet? profet? ipb100n06s3l-03?

Infineon Technologies AG unveiled OptiMOS-T, a new family of "green" power MOSFETs incorporating trench power technology, and PROFET, said to be the world's first family of smart high-side switch ICs that use trench power technology.

To provide a new design option to automotive system engineers working to replace mechanical and hydraulic systems with electrical systems, Infineon has added a new trench power 55V technology named OptiMOS-T to its MOSFET portfolio. The new OptiMOS-T trench power technology allows on-chip integration of more than 10 times the density of logic circuitry compared to planar technology, the company said. The OptiMOS-T technology was especially developed to minimize the on-resistance (Rdson) and reduce conduction losses in automotive applications.

"The robust and green package technology of the OptiMOS-T family underlines Infineon's leading position in automotive power applications," said Christopher Cook, VP for Automotive & Industrial at Infineon Technologies North America Corp. "The products exceed customer expectations in terms of quality and reliability, and reinforce the company's commitment to bring green technology to all its products."

All products of the OptiMOS-T family are already lead-free, allowing automotive system providers to have lead-free products available according to current regulations. OptiMOS-T products meet the requirements of the RoHS (Restricting the use of Hazardous Substances) and WEEE (Waste Electronic and Electrical Equipment) regulations. They are capable of sustaining up to 260C reflow peak temperature. An additional benefit of the OptiMOS-T products' green and robust package is the increased thermal cycling capability. Reliability testing using extended temperature qualification (beyond 1,000 temperature cycles, as per Automotive Electronics Council AEC Q 101) showed no degradation of the die-attach quality and no increase of the thermal resistance.

The first product in the OptiMOS-T family, the IPB100N06S3L-03, is a 2.7 milliohm 55V N-Channel MOSFET in a D2PAK package. A complete product family with Rdson ranging from 2.7 milliohm to about 25 milliohm will be released within the next months.





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