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Mitsubishi touts new low-k material

Posted: 26 Oct 2004 ?? ?Print Version ?Bookmark and Share

Keywords:mitsubishi electric? insulator material?

Mitsubishi Electric Corp. claims to have developed an insulator material with a lower dielectric constant and increased robustness compared to current materials.

The company said the material has nearly the same level of robustness as current insulator materials, and is about six times more robust than current low-k materials, enabling them to use existing production processes.

The International Technology Roadmap for Semiconductors (IRTS) stressed in its 2003 roadmap that mechanical damage from chemical-mechanical planarization has significantly retarded use of low-k materials.

Mitsubishi developed a borazine-based compound that it claims will provide a solution. The borazine material provided a dielectric constant of 2.3 and maintains robustness close to silicon oxide materials that are currently used to insulate layers.

"Among the efforts to develop low-k materials, the mainstream research has been to pursue porous materials," said Hirofumi Fujioka, a manager at Mitsubishi's Advanced Technology R&D Center. "But those materials are subject to being brittle, causing various problems in production. We developed a new borazine-based material that realizes a low dielectric constant without introducing pores into the material. As a nonporous material, it has shown record high performance."

The borazine-based compound used here has a structure similar to benzene, but it's chemistry is different in that the compound includes nitrogen and boron instead of carbon. Borazine reacts with water and oxygen, making it unsuitable as a material for use in the deposition process. By replacing hydrogen surrounding the borazine ring with a carbon radical, Mitsubishi researchers said they obtained a stable material.

The company said the new material will initially be used in devices produced by Renesas Technology Corp., a joint venture of Mitsubishi and Hitachi Ltd.

- Yoshiko Hara

EE Times





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