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New FB DIMM provides increased memory density, bandwidth

Posted: 03 Dec 2004 ?? ?Print Version ?Bookmark and Share

Keywords:samsung electronics? fully buffered dual in-line memory module? fb dimm? ddr2? samsung?

Samsung Electronics Co. Ltd introduced a 1GB Fully Buffered, Dual In-line Memory Module (FB DIMM) based on the DDR2 technology. According to the company, FB DIMM is a new design that resolves the limited memory performance of conventional registered DIMMs and will sharply boost memory density and bandwidth to improve data processing in servers and workstations.

Currently, added Samsung, the memory slot access rate per channel decreases as the memory bus speed increases, resulting in limited density build-up as channel speeds increase. The FB DIMM eliminates this "stub-bus" channel bottleneck by using point-to-point links that enable multiple memory modules to be connected serially to a given channel.

A memory buffer chip is added to each module to enable the use of high and low speed interfaces. The buffer can generate speeds of 3.2Gbps to 4.8Gbps, six-times that of the DRAM.

The company will begin mass production of these new FB DIMMs in the first half of 2005. Jon Kang, SVP for Samsung Semiconductor's technical marketing, said, "We believe that our FB DIMM solution will be adopted by the rest of the memory market and become the most widely used."

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