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IBM, AMD develop strained silicon transistor tech

Posted: 17 Dec 2004 ?? ?Print Version ?Bookmark and Share

Keywords:ibm? advanced micro devices? silicon transistor? processor? dual stress liner?

IBM and Advanced Micro Devices Inc. (AMD) have developed strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology.

The new strained silicon process, called "Dual Stress Liner," enhances the performance of both types of semiconductor transistors, called n-channel and p-channel transistors, by stretching silicon atoms in one transistor and compressing them in the other. The dual stress liner technique works without the introduction of challenging, costly new production techniques, allowing for its rapid integration into volume manufacturing using standard tools and materials.

AMD intends to gradually integrate the new strained silicon technology into all of its 90nm processor platforms, including its future multi-core AMD64 processors. It plans to ship the first 90nm AMD64 processors using the technology in the first half of 2005.

Meanwhile, IBM plans to introduce the technology on multiple 90nm processor platforms, including its Power Architecture-based chips, with the first products slated to begin shipping in the first half of 2005.





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