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Infineon, Nanya to use 70nm process for 300nm DRAMs

Posted: 21 Dec 2004 ?? ?Print Version ?Bookmark and Share

Keywords:nanya technology? 70nm? 300nm? dram chip?

Chip makers Infineon Technologies AG and Nanya Technology Corp. from Taiwan recently came up with a 70nm process technology that will be used to produce 300nm DRAM chips based on deep trench cells.

The two companies have a joint R&D venture, the Infineon Nanya Trench Alliance, which includes 90nm and 70nm DRAM development. The venture is also cooperated in part by the EPRE fund of the European Community and funding of the State Saxony of the Federal Republic of Germany.

The development is expected to boost the two companies' productivity, in time for the expected 51 percent surge in DRAM demand through 2008.

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