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Soitec, ADF to develop MuGFETs for 45nm technology

Posted: 05 Jan 2005 ?? ?Print Version ?Bookmark and Share

Keywords:soi substrate? transistor? mugfet? 45nm? multiple-gate field effect transistors?

In an effort to accelerate the development of new-generation transistors, Soitec Group has disclosed its participation as the SOI substrate supplier in a development program led by Advanced Technology Development Facility (ATDF), the new independent subsidiary of Sematech for advanced semiconductor R&D.

Soitec is involved for over a year in this advanced R&D program at ATDF, which specializes in services involving technology development, wafer processing, and analytical and electrical testing. The ATDF development program focuses on multi-gate field effect transistor (MuGFET) technology for the 45nm node and below. MuGFET is a generic term used to describe a variety of new, multiple-gate field effect transistors, including CMOS FinFETs (FETs with "fin-shaped" transistors) and triple-gate devices.

Throughout ATDF's MuGFET program, Soitec has already supplied its SOI engineered substrates for the verification process of a 45nm node MuGFET test chip using 248nm lithography, which resulted in a functional, tri-gate device. In addition, Soitec is also providing SOI substrates for the development of a working FinFET transistor processed with 193nm lithography.





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