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Hynix, ProMOS sign DRAM production agreement

Posted: 18 Jan 2005 ?? ?Print Version ?Bookmark and Share

Keywords:promos technologies? dram? 300mm?

Hynix Semiconductor Inc. and ProMOS Technologies Inc. have signed a definitive agreement for a long-term strategic alliance to produce Dynamic Random Access Memory (DRAM) chips using 300mm processes.

The agreement is the second between the two companies, which forged an agreement on stacked DRAM technology last September.

The latest alliance between the companies would enable Hynix (Seoul, South Korea) to secure additional 300mm wafer processing capability without its own investments, by using the processes from ProMOS (Taipel, Taiwan). In turn, ProMOS would leverage Hynix's DRAM technology. The agreement also calls for both companies to undertake certain future joint development activities.

During the first half of 2005, Hynix will ramp up the production of 300mm wafers in its own Ichon site. ProMOS will use Hynix's memory technology to run the 300mm foundry service, beginning by the end of this year. The other 300mm wafer fab for the company will be built in China through a joint agreement with ST Microelectronics.

According to iSuppli, the combined brand-based 256Mbyte equivalent DRAM unit market share of Hynix and ProMOS is 23 percent.

"This is a winning transaction for customers and both companies," said Min-liang Chen, chairman and president of ProMOS, in a statement. "ProMOS will pursue an aggressive yet prudent growth strategy to become a full-blown memory solution provider."

- Spencer Chin

EE Times





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