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Transistor's gate stack structure uses Hf-based high-k dielectric

Posted: 20 Jan 2005 ?? ?Print Version ?Bookmark and Share

Keywords:nec? nec electronics? transistor? gate stack structure? hf?

NEC Corp. and NEC Electronics Corp. announced the development of a transistor that features a new gate stack structure using a Hf-based high-k dielectric and a metal gate electrode, which simultaneously realizes significant gate leakage suppression and improvement in transistor operation speed.

According to the press release, this newly developed gate stack boasts excellent characteristics, well satisfying the requirements of 45nm-node low power transistors, and will contribute to the development of future LSIs that can meet the needs of advanced mobile terminals and digital-consumer electronics equipment due to their ultra low power consumption.

By replacing the conventional polycrystalline silicon (poly-Si) with nickel (Ni) silicide as gate-electrode material on the high-k gate dielectric, the transistor current drivability is improved by 20 percent while maintaining the low leakage characteristics of high-k gate dielectrics, explained NEC. This increase corresponds to a decrease in gate leakage to one hundredth as compared with poly-Si/high-k gates, and one hundredth thousand as compared with poly-Si/SiO2 gates, added the two companies.

Meanwhile, the development of novel composition-controlled Ni- Silicide gate-electrode technology, which is pertinent to the combination with Hf-based High-K gate dielectrics, realized a wide range of threshold voltage (Vth) control by varying the alloy composition of Ni silicide based on a simple production process. According to NEC, this technique enables optimum switching characteristics for both PMOS and NMOS transistors.

The two companies added that excellent transistor characteristics, such as sub-threshold current, carrier mobilities and low gate leakage have been achieved.

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