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Toshiba, SanDisk to enable 8Gbit of storage on a chip

Posted: 10 Feb 2005 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory? 70nm? sandisk?

Toshiba Corp. and SanDisk Corp. on Monday (Feb. 7) announced an 8Gb NAND flash memory chip fabricated with 70nm process technology.

The technology claims to enable 1GB of data storage capacity on a single chip. The new chip was reported at the International Solid-State Circuits Conference (ISSCC) here.

Based on a 90nm process, the new NAND flash memory utilizes multi-level cell (MLC) technology, which allows two bits of data to be stored in one memory cell. At 146mm2, the 8Gb chip has an areal density of 6 billion bits or 3 billion transistors per square centimeter.

Performance is maximized by adoption of fast writing circuit techniques, which reduce data write times and support a fast write speed of 6Mbps, according to Toshiba and SanDisk. Read speed is 60Mbps, which is 40 percent faster than previous generation devices.

Toshiba and SanDisk plan to start production of this device by this summer. The companies also plan to commercialize a 16Gb NAND flash memory IC that stacks two of the 8Gb NAND flash memories in a single package.

- Mark LaPedus

Silicon Strategies





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