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TriQuint PA module tailored for GSM/EDGE apps

Posted: 18 Mar 2005 ?? ?Print Version ?Bookmark and Share

Keywords:triquint semiconductor? triquint? gsm? edge? power amplifier module?

TriQuint Semiconductor Inc. unveiled a new GSM-EDGE power amplifier (PA) module that has been optimized for high EDGE efficiency and power class E2 operation while maintaining high GSM/GPRS efficiency. Two EDGE quiescent current states are provided to minimize power consumption during backed-off operation; while in EDGE mode, the control voltage input is disabled, eliminating the need to apply a constant voltage for proper operation.

"The efficiency of this PA in GSM mode supports long handset battery life as phones are used mostly for voice communication," shared David Pickett, TriQuint's GSM Product Marketing Director. "At the same time, the exceptional linearity provides the phone designer margin in EVM and ACPR for EDGE operation."

Measuring 7-by-7-by-1.1mm, the TQM7M5001 incorporates highly integrated and rugged InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM operation. According to the press release, this eliminates the need for any external couplers, power detectors and current sensing to assure output power level. These factors result in decreased size that benefits new, slim-line designs while providing greater power efficiency, which can translate into increased talk time and greater data handling capability, added TriQuint.

The TQM7M5001 features high GSM efficiencies of 50 percent (GSM850), 52 percent (GSM900) and 50 percent (DCS/PCS); and high EDGE efficiencies of 23 percent (GSM850/950) and 23 percent (DCS/PCS).

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