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PA + driver amp deliver 1W

Posted: 22 Mar 2005 ?? ?Print Version ?Bookmark and Share

Keywords:mimix broadband? gallium arsenide? gaas? monolithic microwave integrated circuit? mmic?

Mimix Broadband Inc. announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage balanced power amplifier (pa) and complementary three-stage driver amplifier that both use 0.15?m gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology.

Used as a driver and final stage cascade, this chipset achieves 26dB gain and 1W output power. The PA covers the 43.5GHz to 46.5GHz frequency bands, and it features small signal gain of 13dB with 29dBm output power at 1dB compression (P1dB). The driver amplifier covers this same frequency band, and achieves small signal gain of 13 dB with 24dBm P1dB compression point.

The balanced PA and driver amplifier, identified as 44MPA0478 and 44MPA0470 respectively, are well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and SATCOM applications.

The company performs 100 percent on-wafer RF, DC and output power testing on the 44MPA0478 and 44MPA0470, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, along with production quantities.

- Janine Love

eeProductCenter




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