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RF/Microwave??

PAs lower implementation cost

Posted: 25 Mar 2005 ?? ?Print Version ?Bookmark and Share

Keywords:rf micro devices? rfmd? gallium arsenide heterojunction bipolar transistor? gaas hbt? pre-driver power amplifier?

paCE="7" ALIGN="RIGHT">The new half-watt rf3807 and two-watt rf3809 single-stage devices from RF Micro Devices Inc. (RFMD) operate across CDMA, GSM, DCS, PCS and UMTS frequencies, and lower the total cost of implementation for manufacturers of cellular base stations.

These two gallium arsenide heterojunction bipolar transistor (GaAs HBT) pre-driver power amplifiers (PAs) feature high linearity (>42dBm, UMTS), high power-added efficiency (>40 percent, P1dB) and broadband (450MHz to 2,200MHz) performance.

"The broadband performance of our new highly linear amplifiers enable infrastructure manufacturers to accommodate the demanding capacity requirements of next-generation, feature-rich cellular phones," commented Jeff Shealy, VP, infrastructure product line for RFMD. "Through our manufacturing scale and design expertise in GaAs HBT, we're able to provide our customers a more robust infrastructure-qualified amplifier that leverages our low-cost manufacturing advantage."

Operating in the UMTS frequency band, the RF3807 driver amplifier provides 28.5dBm output power (OP1dB), high power efficiency (40 percent at OP1dB), high linearity (42dBm OIP3) and gain (14.5dB) under linear operation. This device obtains -60dBc Adjacent Channel Power (ACPR) at power output (Pout) of 17dBm (test condition: ACPR measured at 5MHz offset, WCDMA modulation, 64 channel base station forward link).

Operating in the UMTS frequency band, the RF3809 provides 33.5dBm output power (OP1dB), high power efficiency (43 percent at OP1dB), high linearity (43dBm OIP3) and gain (10.5 dB) under linear operation. The RF3809 obtains -60dBc ACPR at Pout of 20dBm (test condition: ACPR measured at 5MHz offset, WCDMA modulation, 64 channel base station forward link).

Both the RF3807 and RF3809 complement the company's GaAs HBT pre-driver and driver amplifier product portfolio, which offers customers an array of design options ranging from 28dBm to 37dBm output power (P1dB). The plastic-packaged RF3807 and RF3809 GaAs HBT pre-driver power amplifiers deliver a low-cost multiband (450MHz to 2,200MHz) option to customers with power output requirements that are less than two-watts (P1dB). For customers seeking driver amplifiers with power output requirements that are greater than two-watts (P1dB), RFMD offers the RF3800 series (RF3800, RF3802, RF3805), assembled in Aluminum Nitride (AlN) packages.

The RF3807 and RF3809 pre-driver amplifiers are priced at $4.07 in quantities of 10,000 units and will be available in volume production during the second quarter of calendar year 2005.




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