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Buffer amp adjusts for low noise or high power

Posted: 06 Apr 2005 ?? ?Print Version ?Bookmark and Share

Keywords:mimix broadband? gallium arsenide? gaas? monolithic microwave integrated circuit? mmic?

Mimix Broadband Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage buffer amplifier with ultra wide bandwidth and high dynamic range. Using 0.15?m gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 18GHz to 38GHz frequency bands and can operate at 3.5Vdc or 5.5Vdc.

Designated the XB1006, it can also be operated with all three stages biased in parallel or with independent bias for input and output stages, as required to optimize performance. The MMIC has a small signal gain of 21dB with a noise figure of 3.2dB across the band. It also has 11dBm output power at 1dB compression (OP1dB) at low noise bias or can provide 15dBm OP1dB at power bias.

The amplifier is well suited as an LO driver or buffer amplifier, and is optimized for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS) and SATCOM.

"The design of this device allows it to be used in many different functional modes in a radio, simplifying design and manufacturing issues, including inventory," stated Dr. Jim Harvey, CTO of Mimix. "At low noise bias it is suitable as an LNA, and in power bias it can support LO buffer and transmit buffer roles."

The company performs 100 percent on-wafer RF, DC, and noise figure testing on the device, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

- Janine Love


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