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Spansion displays NOR flash memory

Posted: 13 Apr 2005 ?? ?Print Version ?Bookmark and Share

Keywords:NOR flash memory? 5V? 3V?

Memory chip vendor Spansion LLC has joined the IIC-China tradeshow this year. The company exhibited its full-series of NOR flash memory, including 5V, 3V and 1.8V products, 1- to 512Mb products, as well as single-chip and multi-chip packaging products (MCP).

The WS-N series is a family of wireless products, based on using 110nm MirrorBit technology, targeted for the wireless handset market. It is said that Spansion has 60 percent of the MCP market in the Asia-Pacific region. The GL-N series is a single-chip NOR flash memory for the embedded market, such as STBs, GPS, switches and routers. Meanwhile, the GL-M series is for NOR flash used in embedded applications, such as DVD players and recorders, modem and VoIP telephony.

To meet the European RoHS regulations, Spansion employed Pb-free packaging. Except for the PLCC and PDIP packaging, which will be available during the third quarter of this year, all packaging will offer Pb-less samples and orders.

Referring to the fierce price competition stirred up by Intel in the NOR flash market, Spansion said they are not threatened for they are a step higher in terms of cost. However, the company believed their main competitor is not Intel but NAND flash suppliers like Samsung Electronics and Toshiba.

In the show, Spansion talked about emerging applications such as 3G handset and portable media player (PMP) that brought great demands on memory capacity. The company said NAND flash is experiencing spring time while NOR flash has to face the challenges.

Although the existing mainstream memory solution in handsets are MCP with NOR flash + SRAM, most NAND flash manufacturers think the future handset is the world of NAND flash + LPSDRAM, while NOR flash + SRAM will be limited to low-end mobile phones. Spansion is proposing a possible solution, NAND+NOR+SRAM.

MirrorBit technology is regarded by Spansion as a magic weapon to fight NAND flash memory. Its symmetry design has doubled the flash memory array density, simplified the manufacturing process, and improved yields without any sacrifice in performance.

- Steven Pan

Electronics Supply & Manufacturing- China





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