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High-power amp IC boosts signals for military, communications apps

Posted: 20 Apr 2005 ?? ?Print Version ?Bookmark and Share

Keywords:mimix broadban? gallium arsenide? gaas? monolithic microwave integrated circuit? mmic?

Mimix Broadband Inc. introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing.

Using 0.5?m gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 8.7GHz to 10.7GHz frequency bands, delivers 40dBm output power, and offers 32 percent power added efficiency. The amplifier also has a typical large signal gain of 17dB with good input and output match. This high power amplifier, identified as XP1007, is well suited for radar and communications systems, primarily for military applications.

Mimix performs 100 percent on-wafer RF and DC testing on the product, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Samples are available now, with production quantities available in 6 to 8 weeks.

- Janine Love

eeProductCenter




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