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MoSys, Fujitsu extend 1T-SRAM technology agreement

Posted: 27 Apr 2005 ?? ?Print Version ?Bookmark and Share

Keywords:1t-sram? semiconductor? portable consumer? asic?

MoSys Inc. has extended its partnership with Fujitsu Ltd to incorporate MoSys' 1T-SRAM technology into high volume semiconductor devices for portable consumer applications manufactured on Fujitsu's 90nm process generation.

Kimiaki Satoh, GM of the FCRAM division at Fujitsu, stated, "We now look to offer the same robust memory capabilities on Fujitsu's most advanced 90nm process, following our 130nm process. By offering both 1T-SRAM embedded macros design and wafer foundry services, we will provide our customers with first class ASIC capabilities and the highest quality in the industry."

Karen Lamar, VP of sales and marketing at MoSys, added, "By combining our unique memory architecture and advanced 1T-Q(R) bit cell with Fujitsu's advanced 90nm logic process, designers of complex ASIC/SoC devices will have access to optimal combination of high density, low power dissipating and high performing solutions for their embedded memory needs."

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