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Siliconix's new power MOSFETs promise to be 80% better

Posted: 06 May 2005 ?? ?Print Version ?Bookmark and Share

Keywords:power mosfet? siliconix? mosfet? vishay intertechnology? si7439dp?

A family of new -150V and -200V p-channel power MOSFETs that offers space-saving solutions for active clamp configurations were recently released by Siliconix Inc.

While p-channel MOSFETs for active clamps offer a simpler alternative to n-channel clamp implementations, the majority of devices suitable for this application were available only in larger packages such as the SO-8 and DPAK, explained Siliconix. With the new devices in the SOT-23 and SC-70, the company brings together small size and on-resistance values at least 80 percent better than the nearest competing devices, the press release said.

Built on Siliconix's advanced p-channel TrenchFET technology, the compact dimensions of the new p-channel power MOSFETs reduce board space requirements to enable smaller overall product design without sacrificing performance. Because p-channel drive circuitry is less complicated than that of n-channel solutions, these devices also allow designers to implement smaller, lower-cost active clamp designs in small and intermediate-sized power converters.

According to Siliconix, a subsidiary of Vishay Intertechnology Inc., its new power MOSFETs are intended for primary-side active clamp circuits in dc-to-dc converters for telecom, datacom and industrial products. With on-resistance values ranging from 1.2? to 2.35?, these products claim to represent industry-best on-resistance for their respective footprints.

In addition to these devices in the SC-70 and SOT-23, Siliconix is releasing two PowerPAK SO-8 devices for the same application. The -150V Si7439DP offers on-resistance of 0.09 m?, while the -200V Si7431DP is rated for 0.174 m?.

Samples and production quantities of the new devices are already available, with lead times of 12 weeks for larger orders.




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