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Agilent HBT model adopted by NEC for high-frequency chip design

Posted: 11 May 2005 ?? ?Print Version ?Bookmark and Share

Keywords:heterojunction bipolar transistor? hbt? simulation? gallium arsenide? gaas?

The heterojunction bipolar transistor (HBT) model from Agilent Technologies Inc. has been selected by NEC Compound Semiconductor Devices Ltd as the standard simulation model for high-frequency gallium arsenide (GaAs) HBT development.

The Agilent HBT model is developed for use with Agilent's advanced design system (ADS) EDA software. It reduces design turns and shortens the design cycle of high-frequency ICs for applications such as power amplifiers for wireless handsets and wireless local area networks (wlan), the company said.

NEC Compound Semiconductor Devices first evaluated the model by extracting the Agilent HBT model based on measurements from the company's own GaAs process. The evaluation confirmed that the non-linear simulation results of high-frequency, large-signal power amplifiers matched the measured results, and they chose to adopt the model.

"It was important for NEC Compound Semiconductor Devices to be able to accurately simulate not just the single transistor but the whole power amplifier module when designing the latest power amplifiers for cellular phones," said Neil Martin, marketing and services manager for Agilent's EEsof EDA division.





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