Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > Memory/Storage
?
?
Memory/Storage??

Micron DDR devices offer increased reliability over standard DRAM

Posted: 26 May 2005 ?? ?Print Version ?Bookmark and Share

Keywords:micron technology? mobile ddr? endur-ic? ddr? dram?

Micron Technology Inc. launched a family of Mobile DDR devices, with product samples of multiple densities now available. According to the press release, the Mobile DDR product family boasts a new architecture with Endur-IC technology specifically designed for mobile systems, and an enhanced feature set that delivers aggressive power specifications, superior bandwidth performance, and increased reliability over standard DRAM.

Micron added that its new products exceed the current Joint Electron Device Engineering Council (JEDEC) standard and provide leading performance with shorter latency, higher speeds, full page burst, multiple addressing options. "There are numerous features derived from Micron's new architecture that translate to system performance benefits for our customers, especially those customers requiring thin die specifications," said Deb Matus, Micron's Product Marketing Manager for Mobile Memory. "The Mobile DDR parts demonstrate great immunity to failures arising during the manufacturing and packaging processes, making them the ideal device for die-based applications, multichip packages (MCPs), systems-in-a-package (SiPs), Package-on-Package (PoP) and other stacked solutions."

Several configurations of the Mobile DDR devices are available today: 128Mb in x16 and 512Mb in x16 and x32 configurations, while the availability of 256Mb devices is scheduled for the second half of 2005. These devices have an industrial temperature range of -40C to 85C.

Endur-IC technology

The Endur-IC technology, a combination of Micron's advanced process technology and a unique implementation of other design methodologies, provides distinct advantages to our customers in terms of low power, high quality, high reliability and overall robustness.

Customers also benefit from temperature compensated self refresh (TCSR) that automatically adjusts refresh according to temperature changes in the device. For further power savings, the partial array self refresh (PASR) feature allows user control of refresh conditions to extend battery life.




Article Comments - Micron DDR devices offer increased r...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top