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Samsung produces 4Gb NAND flash memory using 70nm technology

Posted: 31 May 2005 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory? 70nm?

Samsung Electronics Co. Ltd has begun mass producing what it claims to be the highest density NAND flash device yet to take advantage of advanced 70nm process technology -- 4Gb NAND flash memory. The technology offers larger storage densities for consumer and mobile applications at more affordable pricing.

According to the company, the use of 70nm design technology to produce the 4Gb NAND flash enables them to produce the industry's smallest memory cell size -- 0.025?m2 (25/1000 micrometers). An advanced Argon fluoride photo-lithography light source has been deployed to etch the finer circuitry permitted by the 70nm process.

Samsung's 70nm 4Gb NAND flash writes data at 16-megabytes per second, a 50 percent enhancement over a 90nm 2Gb device, thereby enabling real time data storage of high-definition (HD) video images.

Samsung also announced the first wafer-out at its new 300mm wafer fabrication line, one month ahead of schedule. The 300mm wafer line, Samsung's line 14, initially will produce 4,000 wafer starts per month and gradually ramp up to 15,000 wafer starts by the end of 2005. Line 14 produces 70nm 4Gb NAND and 90nm 2Gb NAND flash memory.





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