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ASMI, Freescale extend collaboration on strained silicon, SOI

Posted: 17 Jun 2005 ?? ?Print Version ?Bookmark and Share

Keywords:silicon? cmos transistor? mobile computing? communication? logic devices?

ASM International NV and Freescale Seminconductor Inc. are collaborating on developing and applying strained silicon for advanced CMOS transistors used in mobile computing, communications and logic devices.

Freescale and ASMI, who have collaborated in the past, are developing selective epitaxy for CMOS transistor structures, the companies said. Selective epitaxial growth induces strain in the channel region of the transistor and stained silicon increases carrier mobility, resulting in increased current output. The companies are investigating methods specifically tuned to optimize the performance of CMOS devices in conjunction with the use of both bulk and silicon-on-insulator wafers.

"Almost from the beginning of the introduction of ASM's unique approach in epitaxy with the single-wafer Epsilon reactor, Freescale has readily applied the technology to manufacturing Si bipolar and the much more complex SiGe heterojunctions devices," said Arthur del Prado, president and CEO of ASMI, in a statement.

- Peter Clarke

EE Times





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