Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Samsung unveils 'fastest 2Gbps 90nm 512Mb GDDR3 DRAM'

Posted: 30 Jun 2005 ?? ?Print Version ?Bookmark and Share

Keywords:samsung electronics? graphics double data rate 3? gddr3? dynamic random access memory? dram?

Samsung Electronics Co. Ltd has developed what it touts as the industry's fastest 2Gbps 90nm 512Mb graphics double data rate 3 (GDDR3) dynamic random access memory (DRAM).

The new 2Gbps graphics solution runs at up to 8GBps, which is 70 percent faster than the conventional 1.2Gbps device, making it ideal for high-quality images and fast animation in PCs, workstations and high-end game consoles, said the press release.

The company also disclosed that they have initiated mass production of its 1.6Gbps 512Mb GDDR3, which was developed in December 2004. Generating 6.4GBps transmission rates, the 1.6Gbps GDDR3 is available in graphic cards with a maximum density of 1GB by combining sixteen monolithic 512Mb GDDR3s together. The new GDDR3 incorporates a JEDEC standard 136-ball package.


Article Comments - Samsung unveils 'fastest 2Gbps 90nm ...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top