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New IR reference board promises to cut OR-ing design overhead

Posted: 06 Jul 2005 ?? ?Print Version ?Bookmark and Share

Keywords:international rectifier? ir? reference design? fet? directfet mosfet?

Reference design cuts the number of FETsInternational Rectifier's new reference design for 12V, 100A active OR-ing applications cuts the number of FETs needed by half compared to competitive solutions. In addition, solution volume is reduced by at least 60 percent, thanks to the company's DirectFET MOSFET's double-sided cooling capability.

"Our new OR-ing reference design gives designers a demonstrated means to test the capabilities of IR's new OR-ing IC in high current applications," said Stephen Oliver, marketing manager for ac-dc products. "OR-ing circuits made with the IR5001S and DirectFET MOSFETs can reduce on-board power dissipation and can be made much smaller than diode solutions for the same power level, all this with an incredibly fast typical 130 ns turn-off delay time."

The reference design contains four IRF6609 20V, 2m? DirectFET MOSFETs in parallel, which results in an effective on-resistance (RDS) of 0.5 m? for a high efficiency OR-ing circuit with fast fault detection and reaction time. An "FET check" feature is enabled in this reference design, and allows real-time "FET-good" checking for extra fault protection and the highest possible reliability for high power systems.

The IRAC500-1-HS100A is available immediately. The kit is priced at $250 each, with price subject to change.

- Vincent Biancomano
eeProductCenter




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