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Intel, Corning codevelop ultraviolet photomask substrates

Posted: 08 Jul 2005 ?? ?Print Version ?Bookmark and Share

Keywords:ule glass photomask? extreme ultraviolet? corning?

Intel Corp. and Corning Inc. have entered into an agreement to develop ultra low thermal expansion ULE glass photomask substrates required for Extreme Ultraviolet (EUV) lithography technology. These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.

The joint development program will help to enable chip production using EUV technology starting in 2009."The cooperative efforts of Corning and Intel will provide the opportunity to develop ULE glass substrates and position them as the material of choice for EUV photomasks," Jim Steiner, SVP, general manager, Corning Specialty Materials said.

"Driving down EUV photomask defect levels is a critical issue for the commercialization of EUV technology. Corning and Intel plan to address the mask substrate contribution to this issue," said Janice Golda, Intel's director of lithography. "The development of higher-quality EUV masks, along with Intel's related efforts in light sources, lithography equipment and new photo resists, will help create the infrastructure needed to position EUV lithography as the key technology for the future," Golda added.

Lithography tools are used in chip making to "print" patterns on a silicon wafer. At present, the industry uses lithography tools that use a 193nm wavelength of light to "print" transistors as small as 50nm. That is equivalent to a painter trying to draw very fine lines using a thick brush. EUV lithography technology will use light that is only 13.5nm wavelength of light, so it can provide chip makers with a very "fine brush" to "draw" smaller transistors in the future.





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